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samsung 2666 DDR4

Significantly improved performance
Significantly improved bandwidth, up to 3200 Mbps
DDR4 can transfer more data at an excellent speed, providing 4 storage groups (out of 16) to reduce interleaving latency. In addition, it has a bandwidth of 3200 Mbps and 1TB/s system memory, making it easier to handle large workloads more quickly.
Low energy consumption, high energy efficiency
Advanced process technology reduces the number of cores and power on/off cycles
With Samsung's advanced 1x nanometer process technology, DDR4 can reduce energy consumption while improving performance and reducing total cost of ownership. The 1.2V low operating voltage and pseudo open drain (POD) interface can achieve lower power consumption, reducing energy consumption by 25%.
Significantly improved reliability
Secure CRC transmission using parity bits to prevent errors
As data centers handle more and more traffic, system reliability becomes increasingly important. The advanced features of Samsung DDR4 ensure excellent data transmission, such as Write Redundancy Check (Write CRC) to help identify multi bit faults, and Parity Check for Command (CMD)/Address (ADD) paths to prevent system failures.
8g 2666 1R4 D4 / 16g 2666 1R4 D4 / 32g 2666 2R4 D4

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Memory type: DDR4

Memory capacity: 8GB

Working frequency: 2666MHz

Memory verification: ECC

Working voltage 1.2V


Memory type: DDR4

Memory capacity: 16GB

Working frequency: 2666MHz

Memory verification: ECC

Working voltage 1.2V


Memory type: DDR4

Memory capacity: 32GB

Working frequency: 2666MHz

Memory verification: ECC

Working voltage 1.2V


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Phone: +8618274592588

E-mail: zero@zarecloud.com

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